All Outputs (5)

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet (2018)
Journal Article
Godinho, J., Reichlová, H., Kriegner, D., Novák, V., Olejník, K., Kašpar, Z., …Wunderlich, J. (2018). Electrically induced and detected Néel vector reversal in a collinear antiferromagnet. Nature Communications, 9(1), Article 4686. https://doi.org/10.1038/s41467-018-07092-2

© 2018, The Author(s). Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with el... Read More about Electrically induced and detected Néel vector reversal in a collinear antiferromagnet.

Spin switching in antiferromagnets using Néel-order spin-orbit torques (2018)
Journal Article
Wadley, P., & Edmonds, K. (2018). Spin switching in antiferromagnets using Néel-order spin-orbit torques. Chinese Physics B, 27(10), Article 107201. https://doi.org/10.1088/1674-1056/27/10/107201

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin-orbit coupling in environmen... Read More about Spin switching in antiferromagnets using Néel-order spin-orbit torques.

Current polarity-dependent manipulation of antiferromagnetic domains (2018)
Journal Article
Wadley, P., Reimers, S., Grzybowski, M. J., Andrews, C., Wang, M., Chauhan, J., …Jungwirth, T. (2018). Current polarity-dependent manipulation of antiferromagnetic domains. Nature Nanotechnology, 13(5), 362-365. https://doi.org/10.1038/s41565-018-0079-1

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields. Tetragonal CuMnAs is a testbed system in which the antiferro... Read More about Current polarity-dependent manipulation of antiferromagnetic domains.

Spin transport and spin torque in antiferromagnetic devices (2018)
Journal Article
Železný, J., Wadley, P., Olejnik, K., Hoffmann, A., & Ohno, H. (2018). Spin transport and spin torque in antiferromagnetic devices. Nature Physics, 14(3), 220-228. https://doi.org/10.1038/s41567-018-0062-7

© 2018 The Publisher. Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use fo... Read More about Spin transport and spin torque in antiferromagnetic devices.

Terahertz electrical writing speed in an antiferromagnetic memory (2018)
Journal Article
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566

© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based... Read More about Terahertz electrical writing speed in an antiferromagnetic memory.