Room-temperature antiferromagnetic memory resistor

Marti, X.; Fina, I.; Frontera, C.; Liu, Jian; Wadley, P.; He, Q.; Paull, R. J.; Clarkson, J. D.; Kudrnovsk�, J.; Turek, I.; Kune�, J.; Yi, D.; Chu, J.-H.; Nelson, C. T.; You, L.; Arenholz, E.; Salahuddin, S.; Fontcuberta, J.; Jungwirth, T.; Ramesh, R.

doi:10.1038/nmat3861

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Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., …Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.

Room-temperature antiferromagnetic memory resistor (2014)
Journal Article
Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374. https://doi.org/10.1038/nmat3861

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical me... Read More about Room-temperature antiferromagnetic memory resistor.