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1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application (2023)
Presentation / Conference Contribution
De Giorgio, M., Li, K., Marchant, S., de Lillo, L., Empringham, L., Serafianos, D., Lea, J., Brockway, S., & Johnson, M. (2023, November). 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application. Presented at 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP), Florianopolis, Brazil

In this paper, a 1.2 kV wirebond-less Silicon Carbide (SiC) Intelligent Power Module (IPM) designed for automotive applications is presented. This IPM includes integrated decoupling capacitors and gate drivers. By utilizing Printed Circuit Board (PCB... Read More about 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application.

Development and Validation of a Smart Architecture for Thyristor Valves (2023)
Journal Article
Sala, G., De Bonis, G., Costabeber, A., Tani, A., Johnson, C. M., & Clare, J. C. (2023). Development and Validation of a Smart Architecture for Thyristor Valves. IEEE Journal of Emerging and Selected Topics in Power Electronics, 11(4), 4068-4076. https://doi.org/10.1109/JESTPE.2023.3262344

A high voltage thyristor converter is realized by many valve sections, whose volume is approximately occupied for only the 10% by thyristors and for the 10% by the relevant gate drivers. The remaining 80% is taken by passive auxiliary circuits, neede... Read More about Development and Validation of a Smart Architecture for Thyristor Valves.