All Outputs (7)

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics, 33(6), 5262 - 5273. https://doi.org/10.1109/TPEL.2017.2730260

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

Design and development of a high-density, high-speed 10 kV SiC MOSFET module (2017)
Presentation / Conference Contribution
Di Marino, C., Boroyevich, D., Burgos, R., Johnson, C. M., & Lu, G.-Q. (2017). Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MO... Read More about Design and development of a high-density, high-speed 10 kV SiC MOSFET module.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (in press). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, https://doi.org/10.1049/iet-est.2017.0022

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Presentation / Conference Contribution
Li, K., Evans, P., & Johnson, C. M. (in press). Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Time-efficient sintering processes to attach power devices using nanosilver dry film (2017)
Presentation / Conference Contribution
Dai, J., Li, J., Agyakwa, P., & Mark Johnson, C. (2017). Time-efficient sintering processes to attach power devices using nanosilver dry film. Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), 2017(HiTEN), 000207–000212. https://doi.org/10.4071/2380-4491.2017.hiten.207

Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an... Read More about Time-efficient sintering processes to attach power devices using nanosilver dry film.

Suppression of electromagnetic interference using screening and shielding techniques within switching cells (2017)
Presentation / Conference Contribution
Zhang, Z., & Johnson, C. M. (2017). Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

in this paper we introduce the use of combination of screening and shielding to suppress electromagnetic interference (EMI) generated by a switching cell. We investigate the screening of common mode (CM) currents and the shielding of magnetic fields... Read More about Suppression of electromagnetic interference using screening and shielding techniques within switching cells.

In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages (2017)
Journal Article
Eleffendi, M. A., & Johnson, C. M. (2017). In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages. IEEE Transactions on Power Electronics, 32(9), 7187-7198. https://doi.org/10.1109/TPEL.2016.2628705

Wire-bond lift-off and Solder fatigue are degradation mechanisms that dominate the lifetime of power semiconductor packages. Although their lifetime is commonly estimated at the design stage, based on mission profiles and Physics-of-Failure models, t... Read More about In-Service Diagnostics for Wire-Bond Lift-off and Solder Fatigue of Power Semiconductor Packages.