An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients
(2022)
Presentation / Conference Contribution
Radu, C., Li, K., Igic, P., Shepherd, S., Wörndle, A., van der Broeck, C. H., & Faramehr, S. (2022). An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (1-6). https://doi.org/10.1109/WiPDAEurope55971.2022.9936259
Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.