Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design
(2023)
Presentation / Conference Contribution
Fayyaz, A., Li, Y., Evans, P., Watson, A., Wheeler, P., & Gerada, C. (2023). Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design. In 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). https://doi.org/10.1109/WiPDAAsia58218.2023.10261906
This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and... Read More about Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design.