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Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article
Cho, Y., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., …Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific Reports, 6(1), https://doi.org/10.1038/srep34474

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
Journal Article
Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., …John, P. (2016). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Proceedings of SPIE, 9900, https://doi.org/10.1117/12.2232143

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., …Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), https://doi.org/10.1038/srep22440

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016)
Journal Article
Cheng, T. S., Davies, A., Summerfield, A., Cho, Y., Cebula, I., Hill, R. J., …Novikov, S. V. (2016). High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science and Technology B, 34(2), 02L101. https://doi.org/10.1116/1.4938157

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for gra... Read More about High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire.

Design, fabrication and demonstration of a 1x20 multimode interference splitter for parallel biosensing applications (2016)
Journal Article
Najeeb, N., Zhang, Y., Mellor, C. J., & Benson, T. M. (2016). Design, fabrication and demonstration of a 1x20 multimode interference splitter for parallel biosensing applications. Journal of Physics: Conference Series, 679(1), doi:10.1088/1742-6596/679/1/012027

This paper presents the experimental achievement of a silicon-on-insulator 1x20 MMI splitter andsimulation evaluations of the TE-like and TM-like mode MMI splitters for parallel biosensing applications. Device fabrication technology and optical chara... Read More about Design, fabrication and demonstration of a 1x20 multimode interference splitter for parallel biosensing applications.


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