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Design of low inductance switching power cell for GaN HEMT based inverter

Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng; Castellazzi, Alberto; Blaabjerg, Frede

Authors

Emre Gurpinar emre.gurpinar@nottingham.ac.uk

Francesco Iannuzzo

Yongheng Yang

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Frede Blaabjerg



Abstract

In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Commonmode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

Journal Article Type Article
Journal IEEE Transactions on Industry Applications
Print ISSN 0093-9994
Electronic ISSN 1939-9367
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
APA6 Citation Gurpinar, E., Iannuzzo, F., Yang, Y., Castellazzi, A., & Blaabjerg, F. (in press). Design of low inductance switching power cell for GaN HEMT based inverter. IEEE Transactions on Industry Applications, doi:10.1109/TIA.2017.2777417
DOI https://doi.org/10.1109/TIA.2017.2777417
Keywords Wide bandgap (WBG) power devices, galliumnitride
(GaN), HEMT, three-level active neutral point clamped
(3L-ANPC) converter, photovoltaic (PV) systems, stray inductance.
Publisher URL http://ieeexplore.ieee.org/document/8119516/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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