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Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

Authors

Noor alhuda Al Saqri

Jorlandio F. Felix

Mohsin Aziz

Vasyl P. Kunets

Dler Adil Jameel ppxdaj@nottingham.ac.uk

David Taylor

M. Henini mohamed.henini@nottingham.ac.uk

Mahmmoud S. Abd El-sadek

Colin Furrow

Morgan E. Ware

Mourad Benamara

Mansour Mortazavi

Gregory Salamo



Abstract

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Journal Article Type Article
Journal Nanotechnology
Print ISSN 0957-4484
Electronic ISSN 1361-6528
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 28
Issue 4
APA6 Citation Al Saqri, N. A., Felix, J. F., Aziz, M., Kunets, V. P., Jameel, D. A., Taylor, D., …Salamo, G. (in press). Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique. Nanotechnology, 28(4), https://doi.org/10.1088/1361-6528/28/4/045707
DOI https://doi.org/10.1088/1361-6528/28/4/045707
Keywords quantum wire intermediate-band solar cells, IV, C-V, DLTS, defect
Publisher URL http://iopscience.iop.org/article/10.1088/1361-6528/28/4/045707/meta;jsessionid=48CD1C55ABE819A3898D49153FEECE90.c4.iopscience.cld.iop.org
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Manuscript Nanotechnology correction.pdf (2 Mb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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