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Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique Thumbnail


Authors

Noor alhuda Al Saqri

Jorlandio F. Felix

Mohsin Aziz

Vasyl P. Kunets

Dler Adil Jameel

David Taylor

Mahmmoud S. Abd El-sadek

Colin Furrow

Morgan E. Ware

Mourad Benamara

Mansour Mortazavi

Gregory Salamo



Abstract

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Journal Article Type Article
Acceptance Date Nov 16, 2016
Online Publication Date Dec 20, 2016
Deposit Date Jan 4, 2017
Publicly Available Date Jan 4, 2017
Journal Nanotechnology
Print ISSN 0957-4484
Electronic ISSN 1361-6528
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 28
Issue 4
DOI https://doi.org/10.1088/1361-6528/28/4/045707
Keywords quantum wire intermediate-band solar cells, IV, C-V, DLTS, defect
Public URL https://nottingham-repository.worktribe.com/output/832677
Publisher URL http://iopscience.iop.org/article/10.1088/1361-6528/28/4/045707/meta;jsessionid=48CD1C55ABE819A3898D49153FEECE90.c4.iopscience.cld.iop.org

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