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Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications

Wang, Zhenyi; Castellazzi, Alberto; Saeed, Sarah; Navarro-Rodríguez, Ángel; Garcia, Pablo

Authors

Zhenyi Wang

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Sarah Saeed

Ángel Navarro-Rodríguez

Pablo Garcia



Abstract

Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one of its ports connected to the energy storage element (Lithium-Ion battery), is tested and analyzed. By swapping the switching frequency of the device, a significant efficiency improvement can be observed by SiC power devices. Experimental results indicated that an efficiency increment of around 2% can be brought by SiC MOSFET. Moreover, the battery losses can be reduced by a maximum of 8% with the increased switching frequency.

Citation

Wang, Z., Castellazzi, A., Saeed, S., Navarro-Rodríguez, Á., & Garcia, P. (2016). Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications

Conference Name 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016)
End Date Nov 9, 2016
Acceptance Date Sep 12, 2016
Publication Date Nov 8, 2016
Deposit Date Mar 24, 2017
Publicly Available Date Mar 24, 2017
Peer Reviewed Peer Reviewed
Keywords Silicon carbide, Solid state transformer, Three-port active bridge converter, Energy storage, Efficiency
Public URL http://eprints.nottingham.ac.uk/id/eprint/41510
Publisher URL http://ieeexplore.ieee.org/document/7799914/
Related Public URLs http://www.wipda2016.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
Additional Information © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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