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Naphthalocyanine Thin Films and Field Effect Transistors

Esmail, Ayad M. S.; Staddon, Christopher R.; Beton, Peter H.


Ayad M. S. Esmail

Christopher R. Staddon


Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force microscopy and X-ray diffraction to show that the films are disordered for room temperature deposition, but show a highly crystalline needlelike morphology for a substrate temperature of ∼200 °C. Field effect transistors exhibit p-channel operation with a mobility, which has a peak value of 0.052 cm2/(V s), showing a high dependence on substrate temperature. Exposure to atmosphere results in an increase in current and mobility and a reduction in threshold voltage. We compare our results with films formed from analogue molecules such as phthalocyanines and naphthalocyanine functionalized with solubilizing side groups and discuss the potential of Nc for applications in organic electronics and sensors.


Esmail, A. M. S., Staddon, C. R., & Beton, P. H. (2016). Naphthalocyanine Thin Films and Field Effect Transistors. Journal of Physical Chemistry C, 120(28), 15338-15341.

Journal Article Type Article
Acceptance Date Jun 17, 2016
Online Publication Date Jul 11, 2016
Publication Date Jul 21, 2016
Deposit Date Oct 3, 2016
Publicly Available Date Oct 3, 2016
Journal Journal of Physical Chemistry C
Print ISSN 1932-7447
Electronic ISSN 1932-7455
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 120
Issue 28
Pages 15338-15341
Public URL
Publisher URL


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