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Experimental and analytical performance evaluation of SiC power devices in the matrix converter

Safari, Saeed; Castellazzi, Alberto; Wheeler, Patrick

Authors

Saeed Safari zbsafari@yahoo.com

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk



Abstract

With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the comparative performance evaluation of different SiC power devices in matrix converter at various temperatures and switching frequencies. To this end, firstly, gate or base drive circuits for Normally-off SiC JFET, SiC MOSFET and SiC BJT which taking into account the special demands for these devices are presented. Then, three 2-phase to 1-phase matrix converters are built with different SiC power devices to measure the switching waveforms and power losses for them at different temperatures and switching frequencies. Based on the measured data, three different SiC power devices are compared in terms of switching times, conduction and switching losses and efficiency at different temperatures and switching frequencies. Furthermore, a theoretical investigation of the power losses of three phase matrix converter with Normally-off SiC JFET, SiC MOSFET, SiC BJT and Si IGBT is described. The power losses estimation indicates that a 7 KW matrix converter would potentially have an efficiency of approximately 96% in high switching frequency if equipped with SiC devices.

Journal Article Type Article
Publication Date May 1, 2014
Journal IEEE Transactions on Power Electronics
Print ISSN 0885-8993
Electronic ISSN 0885-8993
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 29
Issue 5
APA6 Citation Safari, S., Castellazzi, A., & Wheeler, P. (2014). Experimental and analytical performance evaluation of SiC power devices in the matrix converter. IEEE Transactions on Power Electronics, 29(5), https://doi.org/10.1109/TPEL.2013.2289746
DOI https://doi.org/10.1109/TPEL.2013.2289746
Keywords Normally-off SiC JFET; SiC MOSFET; SiC BJT; power losses evaluation; matrix converter
Publisher URL http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6658954
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information c2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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