P3HT:ZnS Based Photovoltaic Devices with Enhanced Performance Assisted by Oxidised Carbon Nanotubes

Wei, Chaohui; T. Bishop, Matthew; Wang, Yifei; Gao, Fei; Wang, Chenxu; Chen, George Zheng

Abstract

© 2020 ECS - The Electrochemical Society. Photovoltaic devices based on P3HT:ZnS bulk heterojunctions currently produce relatively low efficiencies. This work aims to produce a novel photoactive layer, by incorporating oxidised carbon nanotubes (CNTs) into a P3HT:ZnS bulk heterojunction. It was found that the mildly oxidised CNTs (LowOx-CNTs) were longer in length compared to the higher oxidised CNTs (HighOx-CNTs). Due to the reduced conductivity of the HighOx-CNTs, 5 and 10 wt% of HighOx-CNTs performed worse at lower levels than that of the LowOx-CNTs, with the most notable difference at 5 wt% (0.0064% and 0.0096%, respectively). As the load of the CNTs increased, the FFs for both devices decreased and the Jsc values began to plateau at roughly 0.15 mA/cm2. The introduction of CNTs increases the efficiency of the undoped ZnS device by more than 7 times, which can be further increased with the incorporation of electron and hole transporting layers.

Citation

Wei, C., T. Bishop, M., Wang, Y., Gao, F., Wang, C., & Chen, G. Z. (2020). P3HT:ZnS Based Photovoltaic Devices with Enhanced Performance Assisted by Oxidised Carbon Nanotubes. ECS Transactions, 98(7), 225-232. https://doi.org/10.1149/09807.0225ecst

• Journal Article Type: Article
• Acceptance Date: Aug 28, 2020
• Online Publication Date: Sep 23, 2020
• Publication Date: Sep 23, 2020
• Deposit Date: Dec 27, 2020
• Journal: ECS Transactions
• Print ISSN: 1938-5862
• Electronic ISSN: 1938-6737
• Publisher: Electrochemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 98
• Issue: 7
• Pages: 225-232
• ISBN: 9781607685395
• DOI: https://doi.org/10.1149/09807.0225ecst
• Keywords: General Engineering
• Public URL: https://nottingham-repository.worktribe.com/output/4930216
• Publisher URL: https://iopscience.iop.org/article/10.1149/09807.0225ecst