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Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes

Al mashary, Faisal S.; Felix, Jorlandio F.; Ferreira, Sukarno O.; de Souza, Daniele; Gobato, Yara G.; Chauhan, Jasbinder; Alexeeva, Natalia; Henini, Mohamed; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.

Authors

Faisal S. Al mashary

Jorlandio F. Felix

Sukarno O. Ferreira

Daniele de Souza

Yara G. Gobato

Jasbinder Chauhan

Natalia Alexeeva

Abdulrahman M. Albadri

Ahmed Y. Alyamani



Abstract

© 2020 Elsevier B.V. The properties of In-doped TiO2 grown by Pulsed Laser Deposition on (1 0 0) and (3 1 1)B GaAs substrates have been investigated. X-ray diffraction and photoluminescence results have shown that samples grown on (3 1 1)B GaAs planes have better crystallographic properties than those grown on (1 0 0). Both anatase and rutile phases were detected in samples with lower In-doping (In = 5 nm) while only rutile phase was observed for higher In-doped samples (In = 15 nm). Furthermore, In-doping adversely affected the electrical properties of samples grown on (1 0 0) substrates while it enhanced those of (3 1 1)B samples. Two shallow defects were detected in all samples except for (3 1 1)B sample (In = 15 nm) where three shallow defects were observed. The presence of more shallow defects in this sample is evidenced by a red-shift in the absorption spectrum. It was concluded that sample (3 1 1)B (In = 15 nm) is best among all other samples and makes it more suitable for solar cell applications.

Citation

Al mashary, F. S., Felix, J. F., Ferreira, S. O., de Souza, D., Gobato, Y. G., Chauhan, J., …Alyamani, A. Y. (2020). Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes. Materials Science and Engineering: B, 259, https://doi.org/10.1016/j.mseb.2020.114578

Journal Article Type Article
Acceptance Date May 19, 2020
Online Publication Date May 29, 2020
Publication Date Sep 1, 2020
Deposit Date May 31, 2020
Publicly Available Date Nov 30, 2021
Journal Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Print ISSN 0921-5107
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 259
Article Number 114578
DOI https://doi.org/10.1016/j.mseb.2020.114578
Keywords Mechanical Engineering; General Materials Science; Mechanics of Materials; Condensed Matter Physics
Public URL https://nottingham-repository.worktribe.com/output/4546069
Publisher URL https://www.sciencedirect.com/science/article/abs/pii/S0921510720300854
Additional Information This article is maintained by: Elsevier; Article Title: Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes; Journal Title: Materials Science and Engineering: B; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.mseb.2020.114578; Content Type: article; Copyright: © 2020 Elsevier B.V. All rights reserved.

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