@article { , title = {Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes}, abstract = {© 2020 Elsevier B.V. The properties of In-doped TiO2 grown by Pulsed Laser Deposition on (1 0 0) and (3 1 1)B GaAs substrates have been investigated. X-ray diffraction and photoluminescence results have shown that samples grown on (3 1 1)B GaAs planes have better crystallographic properties than those grown on (1 0 0). Both anatase and rutile phases were detected in samples with lower In-doping (In = 5 nm) while only rutile phase was observed for higher In-doped samples (In = 15 nm). Furthermore, In-doping adversely affected the electrical properties of samples grown on (1 0 0) substrates while it enhanced those of (3 1 1)B samples. Two shallow defects were detected in all samples except for (3 1 1)B sample (In = 15 nm) where three shallow defects were observed. The presence of more shallow defects in this sample is evidenced by a red-shift in the absorption spectrum. It was concluded that sample (3 1 1)B (In = 15 nm) is best among all other samples and makes it more suitable for solar cell applications.}, doi = {10.1016/j.mseb.2020.114578}, issn = {0921-5107}, journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology}, publicationstatus = {Published}, publisher = {Elsevier}, url = {https://nottingham-repository.worktribe.com/output/4546069}, volume = {259}, keyword = {Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics}, year = {2020}, author = {Al mashary, Faisal S. and Felix, Jorlandio F. and Ferreira, Sukarno O. and de Souza, Daniele and Gobato, Yara G. and Chauhan, Jasbinder and Alexeeva, Natalia and Henini, Mohamed and Albadri, Abdulrahman M. and Alyamani, Ahmed Y.} }