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Ultrasensitive photodetectors based on graphene quantum dot-InSe mixed-dimensional van der Waals heterostructures

Song, Shuang; Qiao, Jie; Shen, Mengyan; Zhang, Guoping; Feng, Fu; Somekh, Michael G.

Authors

Shuang Song

Jie Qiao

Mengyan Shen

Guoping Zhang

Fu Feng



Abstract

Two-dimensional (2D) semiconducting materials like InSe have attracted considerable attention in the photoelectric detection field due to their outstanding properties, such as a large tunable bandgap, high carrier mobility, low electron effective mass and high absorption coefficient. In this work, a mixed-dimensional van der Waals heterostructure (MvdWH)-based photodetector combining graphene quantum dots (GQDs) with InSe was fabricated. The GQD/InSe MvdWH photodetector achieved a high responsivity of 27.48 A W−1 and a large detectivity of 1.2 × 1012 Jones at 635 nm, a sixty-fold increase compared to the pure InSe devices. The significant enhancement in photoresponsive performances can be attributed to the p-type doping effect and efficient charge transfer from GQDs to InSe. The novel 0D/2D van der Waals heterojunctions offer tremendous opportunities in high-performance photodetectors.

Citation

Song, S., Qiao, J., Shen, M., Zhang, G., Feng, F., & Somekh, M. G. (2022). Ultrasensitive photodetectors based on graphene quantum dot-InSe mixed-dimensional van der Waals heterostructures. Journal of Materials Chemistry C, 10(48), 18174-18181. https://doi.org/10.1039/d2tc03395j

Journal Article Type Article
Acceptance Date Nov 14, 2022
Online Publication Date Nov 16, 2022
Publication Date Nov 16, 2022
Deposit Date Jun 17, 2025
Journal Journal of Materials Chemistry C
Electronic ISSN 2050-7534
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 10
Issue 48
Pages 18174-18181
DOI https://doi.org/10.1039/d2tc03395j
Keywords Materials Chemistry, General Chemistry
Public URL https://nottingham-repository.worktribe.com/output/15431949
Publisher URL https://pubs.rsc.org/en/content/articlelanding/2022/tc/d2tc03395j