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The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor

Cao, Qinze; Gammon, Peter Michael; Renz, Arne Benjamin; Zhang, Luyang; Baker, Guy; Antoniou, Marina; Lophitis, Neo

The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor Thumbnail


Authors

Qinze Cao

Peter Michael Gammon

Arne Benjamin Renz

Luyang Zhang

Guy Baker

Marina Antoniou



Abstract

A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the optimization is ensuring that, during the turn-off phase, minority carrier charge is commutated via the base to the gate, rather than flowing into the cathode, thus reducing large switching losses, and an unstable transition period. This is made possible in the design presented via the introduction of a highly doped base strip (HDBS), which provides a low resistance channel between the centre of the cathode and the gate. This innovation allows the cathode to be extended, such that it makes up 90% of the top surface, thus minimising on-state losses.

Citation

Cao, Q., Gammon, P. M., Renz, A. B., Zhang, L., Baker, G., Antoniou, M., & Lophitis, N. (2022). The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936508

Conference Name 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Conference Location University of Warwick, UK
Start Date Sep 18, 2022
End Date Sep 20, 2022
Acceptance Date Aug 23, 2022
Online Publication Date Nov 8, 2022
Publication Date Sep 18, 2022
Deposit Date Nov 3, 2022
Publicly Available Date Nov 3, 2022
Publisher IEEE
Book Title 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
ISBN 9781665488143
DOI https://doi.org/10.1109/WiPDAEurope55971.2022.9936508
Keywords Silicon carbide; thyristor; IGCT; optimization; simulation
Public URL https://nottingham-repository.worktribe.com/output/13177238
Publisher URL https://ieeexplore.ieee.org/document/9936508
Related Public URLs https://warwick.ac.uk/fac/sci/eng/wipda2022/
Additional Information © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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