Individual device active cooling for enhanced system-level power density and more uniform temperature distribution

Zeng, Y.; Hussein, A.; Castellazzi, A.

Abstract

This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.

Citation

Zeng, Y., Hussein, A., & Castellazzi, A. (2018). Individual device active cooling for enhanced system-level power density and more uniform temperature distribution. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (471-474). https://doi.org/10.1109/ISPSD.2018.8393705

• Conference Name: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• Conference Location: Chicago, IL, USA
• Start Date: May 13, 2018
• End Date: May 17, 2018
• Acceptance Date: Dec 22, 2017
• Online Publication Date: Jun 25, 2018
• Publication Date: Jun 25, 2018
• Deposit Date: Aug 14, 2018
• Publicly Available Date: Aug 15, 2018
• Pages: 471-474
• Series ISSN: 1946-0201
• Book Title: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• ISBN: :978-1-5386-2928-4
• DOI: https://doi.org/10.1109/ISPSD.2018.8393705
• Keywords: Individual active cooling system, GaN HEMT, 3LANPC inverter
• Public URL: https://nottingham-repository.worktribe.com/output/1032705
• Publisher URL: https://ieeexplore.ieee.org/document/8393705/
• Additional Information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.