Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films
(2025)
Journal Article
Jaafar, A. H., Hussein, H., Zhang, T., Zhelev, N., Kemp, N. T., Reid, G., de Groot, K., Bartlett, P. N., & Huang, R. (2025). Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films. Advanced Materials Technologies, Article 2500168. https://doi.org/10.1002/admt.202500168
Chalcogenide materials are promising candidates for next generation memories since they can be stacked to integrate both two-terminal non-volatile memory and volatile selector devices for large-scale-integration crossbar arrays. Traditionally, device... Read More about Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films.