Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
(2016)
Journal Article
Zhou, S., Li, L., Yuan, Y., Rushforth, A., Chen, L., Wang, Y., Böttger, R., Heller, R., Zhao, J., Edmonds, K., Campion, R., Gallagher, B., Timm, C., & Helm, M. (2016). Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism. Physical Review B, 94(7), https://doi.org/10.1103/PhysRevB.94.075205
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity... Read More about Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism.