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Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction (2016)
Journal Article
Nádvornik, L., Olejnik, K., Němec, P., Novák, V., Janda, T., Wunderlich, J., Trojánek, F., & Jungwirth, T. (2016). Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction. Physical Review B, 94(7), Article 075306. https://doi.org/10.1103/PhysRevB.94.075306

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded b... Read More about Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction.

Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region (2016)
Journal Article
Saidl, V., Brajer, M., Horák, L., Reichlová, H., Výborný, K., Veis, M., Janda, T., Trojánek, F., Marysko, M., Fina, I., Marti, X., Jungwirth, T., & Němec, P. (2016). Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region. New Journal of Physics, 18(83017), 1-11. https://doi.org/10.1088/1367-2630/18/8/083017

Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large chan... Read More about Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region.

Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks (2016)
Journal Article
Reichlová, H., Novák, V., Kurosaki, Y., Yamada, M., Yamamoto, H., Nishide, A., Hayakawa, J., Takahashi, H., Marysko, M., Wunderlich, J., Marti, X., & Jungwirth, T. (2016). Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks. Materials Research Express, 3, Article 076406. https://doi.org/10.1088/2053-1591/3/7/076406

Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling an... Read More about Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks.

High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques (2016)
Journal Article
Gomonay, O., Jungwirth, T., & Sinova, J. (2016). High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques. Physical Review Letters, 117(1), Article 017202. https://doi.org/10.1103/PhysRevLett.117.017202

We demonstrate the possibility to drive an antiferromagnetic domain wall at high velocities by fieldlike Néel spin-orbit torques. Such torques arise from current-induced local fields that alternate their orientation on each sublattice of the antiferr... Read More about High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques.

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe (2016)
Journal Article
Kriegner, D., Výborný, K., Olejnik, K., Reichlová, H., Novák, V., Marti, X., Gazquez, J., Saidl, V., Němec, P., Volobuev, V., Springholz, G., Holy, V., & Jungwirth, T. (in press). Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe. Nature Communications, 7(11623), https://doi.org/10.1038/ncomms11623

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memo... Read More about Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.

Room-temperature spin-orbit torque in NiMnSb (2016)
Journal Article
Ciccarelli, C., Anderson, L., Tshitoyan, V., Ferguson, A., Gerhard, F., Gould, C., Molenkamp, L., Gayles, J., Železný, J., Šmejkal, L., Yuan, Z., Sinova, J., Freimuth, F., & Jungwirth, T. (in press). Room-temperature spin-orbit torque in NiMnSb. Nature Physics, 12, https://doi.org/10.1038/nphys3772

Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, the two atomic sites in the unit cell of these crystals form inversion partners which gives... Read More about Room-temperature spin-orbit torque in NiMnSb.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., Novák, V., Olejnik, K., Maccherozzi, F., Dhesi, S. S., Martin, S. Y., Wagner, T., Wunderlich, J., Freimuth, F., Mokrousov, Y., Kunes, J., Chauhan, J., Grzybowski, M. J., Rushforth, A. W., Edmonds, K. W., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.

Antiferromagnetic structure in tetragonal CuMnAs thin films (2015)
Journal Article
Wadley, P., Hills, V. A., Shahedkhah, M. R., Edmonds, K. W., Campion, R. P., Novák, V., Ouladdiaf, B., Khalyavin, D., Langridge, S., Saidl, V., Němec, P., Rushforth, A. W., Gallagher, B. L., Dhesi, S. S., Maccherozzi, F., Železný, J., & Jungwirth, T. (2015). Antiferromagnetic structure in tetragonal CuMnAs thin films. Scientific Reports, 5(1), Article 17079. https://doi.org/10.1038/srep17079

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetrag... Read More about Antiferromagnetic structure in tetragonal CuMnAs thin films.

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., Gallagher, B. L., Schmoranzerová, E., Trojánek, F., Malý, P., Motloch, P., Novák, V., Jungwirth, T., & Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.