Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices
(2022)
Journal Article
Wallace, A. G., King, R. P., Zhelev, N., Jaafar, A. H., Levason, W., Huang, R., Reid, G., & Bartlett, P. N. (2022). Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices. Electrochimica Acta, 432, Article 141162. https://doi.org/10.1016/j.electacta.2022.141162
In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the depos... Read More about Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices.