Outputs (4)

Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films (2022)
Journal Article
Jaafar, A. H., Meng, L., Zhang, T., Guo, D., Newbrook, D., Zhang, W., …Huang, R. (2022). Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films. ACS Applied Nano Materials, 5(12), 17711-17720. https://doi.org/10.1021/acsanm.2c03639

We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe c... Read More about Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films.

3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing (2022)
Journal Article
Jaafar, A. H., Shao, L., Dai, P., Zhang, T., Han, Y., Beanland, R., Kemp, N. T., Bartlett, P. N., Hector, A. L., & Huang, R. (2022). 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. Nanoscale, 14(46), 17170-17181. https://doi.org/10.1039/d2nr05012a

Memristors are emerging as promising candidates for practical application in reservoir computing systems that are capable of temporal information processing. Here, we experimentally implement a physical reservoir computing system using resistive memr... Read More about 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing.

Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices (2022)
Journal Article
Wallace, A. G., King, R. P., Zhelev, N., Jaafar, A. H., Levason, W., Huang, R., Reid, G., & Bartlett, P. N. (2022). Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices. Electrochimica Acta, 432, Article 141162. https://doi.org/10.1016/j.electacta.2022.141162

In this paper we report the use of Na3[SbS4].9H2O as a single source precursor for the electrodeposition of Sb2S3 from aqueous electrolyte at pH 9.1. We present the electrochemistry of the [SbS4]3− anion and the redox processes observed for the depos... Read More about Anodic Sb2S3 Electrodeposition from a Single Source Precursor for Resistive Random-Access Memory Devices.

Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms (2022)
Book Chapter
Gee, A., Jaafar, A. H., & Kemp, N. T. (2022). Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms. In L. O. Chua, R. Tetzlaff, & A. Slavova (Eds.), Memristor Computing Systems (219-244). Springer International Publishing. https://doi.org/10.1007/978-3-030-90582-8_10

Memristors are known for their low-power non-volatile memory operation, high scalability and simple two-terminal geometry. Their ability to emulate the analogue switching and learning properties of biological synapses has also emerged as a significan... Read More about Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms.