Outputs (3)

Additively manufactured ultra-high vacuum chamber for portable quantum technologies (2021)
Journal Article
Cooper, N., Coles, L., Everton, S., Maskery, I., Campion, R., Madkhaly, S., …Hackermüller, L. (2021). Additively manufactured ultra-high vacuum chamber for portable quantum technologies. Additive Manufacturing, 40, Article 101898. https://doi.org/10.1016/j.addma.2021.101898

© 2021 Additive manufacturing is having a dramatic impact on research and industry across multiple sectors, but the production of additively manufactured systems for ultra-high vacuum applications has so far proved elusive and widely been considered... Read More about Additively manufactured ultra-high vacuum chamber for portable quantum technologies.

Temporal superoscillation of sub-terahertz coherent acoustic phonons (2020)
Journal Article
Brehm, S., Akimov, A. .., Campion, R. P., & Kent, A. J. (2020). Temporal superoscillation of sub-terahertz coherent acoustic phonons. Physical Review Research, 2(2), Article 023009. https://doi.org/10.1103/PhysRevResearch.2.023009

We observe coherent acoustic phonon superoscillations at sub-terahertz frequencies. The superoscillations result from the interference of optically excited coherent longitudinal acoustic phonon modes in a GaAs/AlGaAs superlattice. The superoscillatio... Read More about Temporal superoscillation of sub-terahertz coherent acoustic phonons.

Terahertz electrical writing speed in an antiferromagnetic memory (2018)
Journal Article
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566

© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based... Read More about Terahertz electrical writing speed in an antiferromagnetic memory.