Professor Amalia Patane's Outputs (80)

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., Makarovsky, O., Eaves, L., Solomon, A., Maslyuk, V. T., Kovalyuk, Z. D., Zhang, L., & Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), Article 1908092. https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors (2019)
Journal Article
Cottam, N. D., Zhang, C., Turyanska, L., Eaves, L., Kudrynskyi, Z., Vdovin, E. E., Patanè, A., & Makarovsky, O. (2020). Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors. ACS Applied Electronic Materials, 2, 147-154. https://doi.org/10.1021/acsaelm.9b00664

Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wav... Read More about Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors.

High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics (2019)
Journal Article
Greener, J. D., de Lima Savi, E., Akimov, A. V., Raetz, S., Kudrynskyi, Z., Kovalyuk, Z. D., Chigarev, N., Kent, A., Patané, A., & Gusev, V. E. (2019). High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics. ACS Nano, 13(10), 11530-11537. https://doi.org/10.1021/acsnano.9b05052

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability and perform... Read More about High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., Kudrynskyi, Z., Kovalyuk, Z. D., Patanè, A., Grigorenko, A. N., Haigh, S. J., Hardacre, C., Eaves, L., Sahin, H., Geim, A. K., Peeters, F. M., & Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, 19(9), 6475-6481. https://doi.org/10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Schottky-barrier thin-film transistors based on HfO2-capped InSe (2019)
Journal Article
Wang, Y., Zhang, J., Liang, G., Shi, Y., Zhang, Y., Kudrynskyi, Z. R., Kovalyuk, Z. D., Patanè, A., Xin, Q., & Song, A. (2019). Schottky-barrier thin-film transistors based on HfO2-capped InSe. Applied Physics Letters, 115(3), Article 033502. https://doi.org/10.1063/1.5096965

© 2019 Author(s). Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectr... Read More about Schottky-barrier thin-film transistors based on HfO2-capped InSe.

Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN (2019)
Journal Article
Zhang, C., Turyanska, L., Cao, H., Zhao, L., Fay, M. W., Temperton, R., O'Shea, J., Thomas, N. R., Wang, K., Luan, W., & Patanè, A. (2019). Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN. Nanoscale, 11(28), 13450-13457. https://doi.org/10.1039/C9NR03707A

Despite important advances in the synthesis of inorganic perovskite nanocrystals (NCs), the long-term instability and degradation of their quantum yield (QY) over time need to be addressed to enable the further development and exploitation of these n... Read More about Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN.

Realization of Universal Quantum Gates with Spin-Qudits in Colloidal Quantum Dots (2019)
Journal Article
Moro, F., Fielding, A. J., Turyanska, L., & Patanè, A. (2019). Realization of Universal Quantum Gates with Spin-Qudits in Colloidal Quantum Dots. Advanced Quantum Technologies, 2(10), 1-6. https://doi.org/10.1002/qute.201900017

Hyperfine interactions in a single Mn‐ion confined in a quantum dot (QD) are exploited to create a qudit, that is, a multilevel quantum‐bit system, with well‐defined, addressable, and robust set of spin states for the realization of universal quantum... Read More about Realization of Universal Quantum Gates with Spin-Qudits in Colloidal Quantum Dots.

Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts (2019)
Journal Article
Wei, X., Yan, F., Lv, Q., Zhu, W., Hu, C., Patane, A., & Wang, K. (2019). Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts. Advanced Optical Materials, 7(12), Article 1900190. https://doi.org/10.1002/adom.201900190

Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene... Read More about Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts.

Formation and healing of defects in atomically thin GaSe and InSe (2019)
Journal Article
Hopkinson, D. G., Zólyomi, V., Rooney, A. P., Clark, N., Terry, D. J., Hamer, M., Lewis, D. J., Allen, C. S., Kirkland, A. I., Andreev, Y., Kudrynskyi, Z., Kovalyuk, Z., Patanè, A., Fal 'ko, V. I., Gorbachev, R., & Haigh, S. J. (2019). Formation and healing of defects in atomically thin GaSe and InSe. ACS Nano, 13(5), 5112-5123. https://doi.org/10.1021/acsnano.8b08253

© 2019 American Chemical Society. Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point a... Read More about Formation and healing of defects in atomically thin GaSe and InSe.

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride (2018)
Journal Article
Patanè, A., Mishchenko, A., Greenaway, M., Vdovin, E., Ghazaryan, D., Misra, A., Mischenko, A., Cao, Y., Wang, Z., Walbank, J., Holwill, M., Khanin, Y., Morozov, S., Watanabe, K., Taniguchi, T., Makarovsky, O., Fromhold, T., Patané, A., Geim, A., Falko, V., …Eaves, L. (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1(1), Article 94. https://doi.org/10.1038/s42005-018-0097-1

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applicat... Read More about Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., Vdovin, E. E., Piot, B. A., Lobanova, I. I., Kovalyuk, Z. D., Nazarova, M., Mischenko, A., Novoselov, K. S., Cao, Y., Eaves, L., Yusa, G., & Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), Article 1805491. https://doi.org/10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Coherent acoustic phonons in van der Waals nanolayers and heterostructures (2018)
Journal Article
Greener, J. D., Akimov, A. V., Gusev, V., Kudrynskyi, Z., Beton, P. H., Kovalyuk, Z. D., Taniguchi, T., Watanabe, K., Kent, A., & Patanè, A. (2018). Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B, 98(7), Article 075408. https://doi.org/10.1103/PhysRevB.98.075408

Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution a... Read More about Coherent acoustic phonons in van der Waals nanolayers and heterostructures.

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water (2018)
Journal Article
Bomers, M., Di Paola, D. M., Cerutti, L., Michel, T., Arinero, R., Tournié, E., Patanè, A., & Taliercio, T. (2018). Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water. Semiconductor Science and Technology, 33(9), Article 095009. https://doi.org/10.1088/1361-6641/aad4bf

The oxidation of GaSb in aqueous environments has gained interest by the advent of plasmonic antimonide-based compound semiconductors for molecular sensing applications. This work focuses on quantifying the GaSb–water reaction kinetics by studying a... Read More about Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water.

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure (2018)
Journal Article
Lee, Y., Pisoni, R., Overweg, H., Eich, M., Rickhaus, P., Patane, A., Kudrynskyi, Z., Kovalyuk, Z. D., Gorbachev, R., Watanabe, K., Taniguchi, T., Ihn, T., & Ensslin, K. (2018). Magnetotransport and lateral confinement in an InSe van der Waals heterostructure. 2D Materials, 5(3), Article 035040. https://doi.org/10.1088/2053-1583/aacb49

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c... Read More about Magnetotransport and lateral confinement in an InSe van der Waals heterostructure.

Improved performance of InSe field-effect transistors by channel encapsulation (2018)
Journal Article
Liang, G., Wang, Y., Han, L., Yang, Z.-X., Xin, Q., Kudrynskyi, Z. R., Kovalyuk, Z. D., Patanè, A., & Song, A. (2018). Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33(6), Article 06LT01. https://doi.org/10.1088/1361-6641/aab62b

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosp... Read More about Improved performance of InSe field-effect transistors by channel encapsulation.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures (2018)
Journal Article
Hamer, M. J., Tovari, E., Zhu, M., Thompson, M., Mayorov, A., Prance, J., Lee, Y., Haley, R. P., Kudrynskyi, Z. R., Patanè, A., Terry, D., Kovalyuk, Z. D., Ensslin, K., Kretinin, A. V., Geim, A., & Gorbachev, R. (2018). Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures. Nano Letters, 18(6), 3950-3955. https://doi.org/10.1021/acs.nanolett.8b01376

© Copyright 2018 American Chemical Society. Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attr... Read More about Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., Patanè, A., & Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5(3), https://doi.org/10.1088/2053-1583/aac479

We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.

Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal (2018)
Journal Article
Moro, F., Bhuiyan, M. A., Kudrynskyi, Z. R., Puttock, R., Kazakova, O., Makarovsky, O., Fay, M., Parmenter, C. D., Kovalyuk, Z. D., Fielding, A. J., Kern, M., van Slageren, J., & Patanè, A. (2018). Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5(7), Article 1800257. https://doi.org/10.1002/advs.201800257

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These techno... Read More about Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal.

Stable DHLA–PEG capped PbS quantum dots: from synthesis to near-infrared biomedical imaging (2018)
Journal Article
Zamberlan, F., Turyanska, L., Patanè, A., Liu, Z., Williams, H., Fay, M., Clarke, P., Imamura, Y., Jin, T., Bradshaw, T., Thomas, N., & Grabowska, A. (in press). Stable DHLA–PEG capped PbS quantum dots: from synthesis to near-infrared biomedical imaging. Journal of Materials Chemistry B, 6, https://doi.org/10.1039/c7tb02912h

The short shelf-life of water-soluble quantum dots (QDs) due to colloidal instability represents a major drawback to their exploitation. This work examines the colloidal stability of PbS nanoparticles capped with dihydrolipoic acid–polyethylene glyco... Read More about Stable DHLA–PEG capped PbS quantum dots: from synthesis to near-infrared biomedical imaging.

Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor (2017)
Journal Article
Di Paola, D., Velichko, A. V., Bomers, M., Balakrishnan, N., Makarovsky, O., Capizzi, M., Cerutti, L., Baranov, A. N., Kesaria, M., Krier, A., Taliercio, T., & Patanè, A. (2018). Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials, 6(3), Article 1700492. https://doi.org/10.1002/adom.201700492

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of... Read More about Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor.