Mahabub A. Bhuiyan
Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures
Bhuiyan, Mahabub A.; Kudrynskyi, Zakhar R.; Mazumder, Debarati; Greener, Jake D.G.; Makarovsky, Oleg; Mellor, Christopher J.; Vdovin, Evgeny E.; Piot, Benjamin A.; Lobanova, Inna I.; Kovalyuk, Zakhar D.; Nazarova, Marina; Mischenko, Artem; Novoselov, Kostya S.; Cao, Yang; Eaves, Laurence; Yusa, Go; Patan�, Amalia
Authors
ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne Mclaren Fellows
Debarati Mazumder
Jake D.G. Greener
OLEG MAKAROVSKIY Oleg.Makarovsky@nottingham.ac.uk
Associate Professor
CHRISTOPHER MELLOR chris.mellor@nottingham.ac.uk
Associate Professor and Reader in Physics
Evgeny E. Vdovin
Benjamin A. Piot
Inna I. Lobanova
Zakhar D. Kovalyuk
Marina Nazarova
Artem Mischenko
Kostya S. Novoselov
Yang Cao
LAURENCE EAVES laurence.eaves@nottingham.ac.uk
Research Professor
Go Yusa
Professor AMALIA PATANE AMALIA.PATANE@NOTTINGHAM.AC.UK
Professor of Physics
Abstract
The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post‐transition” metal chalcogenide InSe. Here we report on field effect phototransistors where single layer graphene is capped with n-type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. We show that the light-induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate-controllable and only weakly dependent on temperature. We probe the charge transfer at the InSe/graphene interface by Hall effect and photoconductivity measurements, and demonstrate that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light-induced charge transfer in gate-tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.
Journal Article Type | Article |
---|---|
Acceptance Date | Nov 7, 2018 |
Online Publication Date | Nov 27, 2018 |
Publication Date | Jan 17, 2019 |
Deposit Date | Nov 14, 2018 |
Publicly Available Date | Nov 14, 2018 |
Journal | Advanced Functional Materials |
Print ISSN | 1616-301X |
Electronic ISSN | 1616-3028 |
Publisher | Wiley |
Peer Reviewed | Peer Reviewed |
Volume | 29 |
Issue | 3 |
Article Number | 1805491 |
DOI | https://doi.org/10.1002/adfm.201805491 |
Public URL | https://nottingham-repository.worktribe.com/output/1248453 |
Publisher URL | https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201805491 |
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