Kamil Olejn�k
Terahertz electrical writing speed in an antiferromagnetic memory
Olejn�k, Kamil; Seifert, Tom; Ka�par, Zden?k; Nov�k, V�t; Wadley, Peter; Campion, Richard P.; Baumgartner, Manuel; Gambardella, Pietro; N?mec, Petr; Wunderlich, Joerg; Sinova, Jairo; Ku�el, Petr; M�ller, Melanie; Kampfrath, Tobias; Jungwirth, Tomas
Authors
Tom Seifert
Zden?k Ka�par
V�t Nov�k
PETER WADLEY PETER.WADLEY@NOTTINGHAM.AC.UK
Royal Society Principal Research Fellow
RICHARD CAMPION RICHARD.CAMPION@NOTTINGHAM.AC.UK
Principal Research Fellow
Manuel Baumgartner
Pietro Gambardella
Petr N?mec
Joerg Wunderlich
Jairo Sinova
Petr Ku�el
Melanie M�ller
Tobias Kampfrath
TOMAS JUNGWIRTH tomas.jungwirth@nottingham.ac.uk
Research Professor of Ferromagnetic Semiconductors
Abstract
© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.
Citation
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566
Journal Article Type | Article |
---|---|
Acceptance Date | Feb 8, 2018 |
Online Publication Date | Mar 23, 2018 |
Publication Date | Mar 2, 2018 |
Deposit Date | Feb 3, 2020 |
Publicly Available Date | Feb 3, 2020 |
Journal | Science Advances |
Electronic ISSN | 2375-2548 |
Publisher | American Association for the Advancement of Science |
Peer Reviewed | Peer Reviewed |
Volume | 4 |
Issue | 3 |
Article Number | eaar3566 |
DOI | https://doi.org/10.1126/sciadv.aar3566 |
Public URL | https://nottingham-repository.worktribe.com/output/1870753 |
Publisher URL | https://advances.sciencemag.org/content/4/3/eaar3566 |
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Terahertz electrical writing speed in an antiferromagnetic memory
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Publisher Licence URL
https://creativecommons.org/licenses/by-nc/4.0/
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