Single pulse short-circuit robustness and repetitive stress aging of GaN GITs

Castellazzi, Alberto; Fayyaz, Asad; Zhu, Siwei; Oeder, Thorsten; Pfost, Martin

Abstract

Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational mode, sort-circuit can be nonetheless a relatively frequent event. Due to its associated considerable electro-thermal stress levels, a thorough analysis of both single pulse withstand capability and device aging as a result of repetitive stress are mandatory before widespread deployment of new device technologies. In this paper, the focus is on latest generation commercial gate-injection GaN transistors, in the 600 V rating class. Extensive experimental analysis is presented, putting forward an interpretation of the underlying degradation and failure mechanisms, supported by coupled electro-thermal device models, incorporating both the functional and structural characteristics of the devices. The findings highlight a remarkable robustness of a specific type of p-gate GaN HEMTs, referred to as gate injection transistors (GITs), against short-circuit stress, making them a potentially very attractive and competitive technology in the voltage class of relevance.

Citation

Castellazzi, A., Fayyaz, A., Zhu, S., Oeder, T., & Pfost, M. (2018, March). Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. Presented at 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA

• Presentation Conference Type: Edited Proceedings
• Conference Name: 2018 IEEE International Reliability Physics Symposium (IRPS)
• Start Date: Mar 11, 2018
• End Date: Mar 15, 2018
• Acceptance Date: Jan 15, 2018
• Online Publication Date: May 3, 2018
• Publication Date: 2018
• Deposit Date: Aug 14, 2018
• Publicly Available Date: Aug 15, 2018
• Pages: 4E.1-1-4E.1-10
• Series ISSN: 1938-1891
• Book Title: Proceedings of 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, California, USA
• ISBN: 978-1-5386-5480-4
• DOI: https://doi.org/10.1109/IRPS.2018.8353593
• Public URL: https://nottingham-repository.worktribe.com/output/1032775
• Publisher URL: https://ieeexplore.ieee.org/document/8353593/
• Additional Information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
• Contract Date: Aug 14, 2018