SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Asllani, Besar; Morel, Herve; Planson, Dominique; Fayyaz, Asad; Castellazzi, Alberto

Abstract

V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

Citation

Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2018, November). SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. Presented at 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nottingham, UK

• Presentation Conference Type: Conference Paper (published)
• Conference Name: 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
• Start Date: Nov 7, 2018
• End Date: Nov 9, 2018
• Acceptance Date: Jul 26, 2018
• Online Publication Date: Jan 14, 2019
• Publication Date: Jan 9, 2019
• Deposit Date: Feb 21, 2019
• Publicly Available Date: Mar 1, 2019
• Publisher: Institute of Electrical and Electronics Engineers
• DOI: https://doi.org/10.1109/ESARS-ITEC.2018.8607547
• Keywords: VTH Hysteresis; VTH instabillities; Short Circuit; SiC MOSFET; Reliability
• Public URL: https://nottingham-repository.worktribe.com/output/1576351
• Publisher URL: https://ieeexplore.ieee.org/document/8607547
• Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
• Contract Date: Feb 21, 2019