Effect of Parameters Variability on the Performance of SiC MOSFET Modules

Borghese, Alessandro; Riccio, Michele; Breglio, Giovanni; Fayyaz, Asad; Castellazzi, Alberto; Irace, Andrea; Marese, Luca

Abstract

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on a set of 20 MOSFETs. In order to assess the effects of parameters spread in a real operating condition, the electrothermal simulation of a 200kHz synchronous buck converter is performed. Subsequently, an investigation of the switching energy unbalance, as a function of parameters distribution tolerances, is achieved through several sets of Monte Carlo electrothermal simulations. The results aim at aiding both the design of multi-chip configurations and the selection of appropriate fabrication process rejection boundaries.

Citation

Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018, November). Effect of Parameters Variability on the Performance of SiC MOSFET Modules. Presented at 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nottingham, UK

• Presentation Conference Type: Edited Proceedings
• Conference Name: 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
• Start Date: Nov 7, 2018
• End Date: Nov 9, 2018
• Acceptance Date: Jul 26, 2018
• Online Publication Date: Jan 14, 2019
• Publication Date: Nov 9, 2018
• Deposit Date: Oct 26, 2018
• Publicly Available Date: Oct 26, 2018
• Publisher: Institute of Electrical and Electronics Engineers
• Pages: 1-5
• Book Title: Proceedings on 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
• ISBN: 978-1-5386-4193-4
• DOI: https://doi.org/10.1109/ESARS-ITEC.2018.8607593
• Keywords: MOSFET , Silicon carbide , Integrated circuit modeling , Switches , Semiconductor device modeling , Performance evaluation , Reliability
• Public URL: https://nottingham-repository.worktribe.com/output/1194561
• Publisher URL: https://ieeexplore.ieee.org/document/8607593
• Related Public URLs: http://www.esars-itec.org/
• Additional Information: © 2018 EEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
• Contract Date: Oct 26, 2018