Outputs (13)

Effect of Parameters Variability on the Performance of SiC MOSFET Modules (2018)
Presentation / Conference Contribution
Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018, November). Effect of Parameters Variability on the Performance of SiC MOSFET Modules. Presented at 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nottingham, UK

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on... Read More about Effect of Parameters Variability on the Performance of SiC MOSFET Modules.

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness (2018)
Presentation / Conference Contribution
Wu, H., Fayyaz, A., & Castellazzi, A. (2018, May). P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness. Presented at 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, USA

This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse... Read More about P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness.

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures (2018)
Journal Article
Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, 811-817. https://doi.org/10.4028/www.scientific.net/msf.924.811

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated comme... Read More about SiC MOSFET device parameter spread and ruggedness of parallel multichip structures.

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs (2018)
Presentation / Conference Contribution
Castellazzi, A., Fayyaz, A., Zhu, S., Oeder, T., & Pfost, M. (2018, March). Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. Presented at 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA

Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational... Read More about Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.

Static and dynamic TSEPs of SiC and GaN transistors (2018)
Presentation / Conference Contribution
Zhu, S., Fayyaz, A., & Castellazzi, A. Static and dynamic TSEPs of SiC and GaN transistors. Presented at 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018)

This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various wh... Read More about Static and dynamic TSEPs of SiC and GaN transistors.

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs (2017)
Presentation / Conference Contribution
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. Presented at 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche reg... Read More about Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.

Transient out-of-SOA robustness of SiC power MOSFETs (2017)
Presentation / Conference Contribution
Castellazzi, A., Fayyaz, A., Romano, G., Riccio, M., Irace, A., Urresti-Ibanez, J., & Wright, N. Transient out-of-SOA robustness of SiC power MOSFETs. Presented at 2017 IEEE International Reliability Physics Symposium (IRPS 2017)

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper consider... Read More about Transient out-of-SOA robustness of SiC power MOSFETs.

A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs (2017)
Journal Article
Fayyaz, A., Romano, G., Urresti, J., Riccio, M., Castellazzi, A., Irace, A., & Wright, N. (2017). A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10(4), Article 452. https://doi.org/10.3390/en10040452

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying... Read More about A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs.

UIS failure mechanism of SiC power MOSFETs (2016)
Presentation / Conference Contribution
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. UIS failure mechanism of SiC power MOSFETs. Presented at 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016)

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown even... Read More about UIS failure mechanism of SiC power MOSFETs.

Body diode reliability investigation of SiC power MOSFETs (2016)
Journal Article
Fayyaz, A., Romano, G., & Castellazzi, A. (2016). Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64, 530-534. https://doi.org/10.1016/j.microrel.2016.07.044

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to... Read More about Body diode reliability investigation of SiC power MOSFETs.