Debora Pierucci
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure
Pierucci, Debora; Zribi, Jihene; Henck, Hugo; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fevre, Patrick; Gil, Bernard; Summerfield, Alex; Beton, Peter H.; Novikov, Sergei V.; Cassabois, Guillaume; Rault, Julien E.; Ouerghi, Abdelkarim
Authors
Jihene Zribi
Hugo Henck
Julien Chaste
Mathieu G. Silly
François Bertran
Patrick Le Fevre
Bernard Gil
Alex Summerfield
PETER BETON peter.beton@nottingham.ac.uk
Professor of Physics
SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
Guillaume Cassabois
Julien E. Rault
Abdelkarim Ouerghi
Abstract
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.
Citation
Pierucci, D., Zribi, J., Henck, H., Chaste, J., Silly, M. G., Bertran, F., …Ouerghi, A. (2018). Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112(25), https://doi.org/10.1063/1.5029220
Journal Article Type | Article |
---|---|
Acceptance Date | May 28, 2018 |
Publication Date | Jun 18, 2018 |
Deposit Date | Jul 10, 2018 |
Publicly Available Date | Jul 10, 2018 |
Journal | Applied Physics Letters |
Print ISSN | 0003-6951 |
Electronic ISSN | 1077-3118 |
Publisher | American Institute of Physics |
Peer Reviewed | Peer Reviewed |
Volume | 112 |
Issue | 25 |
DOI | https://doi.org/10.1063/1.5029220 |
Keywords | Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy |
Public URL | https://nottingham-repository.worktribe.com/output/939568 |
Publisher URL | https://aip.scitation.org/doi/10.1063/1.5029220 |
Contract Date | Jul 10, 2018 |
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