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Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (2024). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics, https://doi.org/10.1109/tpel.2024.3405320

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage ( Vth ) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.

Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (in press). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics,

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage (Vth) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the im... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.