Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions
(2022)
Journal Article
Zhu, W., Xie, S., Lin, H., Zhang, G., Wu, H., Hu, T., …Wang, K. (2022). Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions. Chinese Physics Letters, 39(12), Article 128501. https://doi.org/10.1088/0256-307x/39/12/128501
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructur... Read More about Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions.