Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water
(2018)
Journal Article
Bomers, M., Di Paola, D. M., Cerutti, L., Michel, T., Arinero, R., Tournié, E., Patanè, A., & Taliercio, T. (2018). Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water. Semiconductor Science and Technology, 33(9), Article 095009. https://doi.org/10.1088/1361-6641/aad4bf
The oxidation of GaSb in aqueous environments has gained interest by the advent of plasmonic antimonide-based compound semiconductors for molecular sensing applications. This work focuses on quantifying the GaSb–water reaction kinetics by studying a... Read More about Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water.