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Lattice-Matched Epitaxial Graphene Grown on Boron Nitride

Davies, Andrew; Albar, J.D.; Summerfield, Alex; Thomas, James C.; Cheng, Tin S.; Korolkov, Vladimir V.; Stapleton, Emily; Wrigley, James; Goodey, Nathan L.; Mellor, Christopher J.; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Foxon, C.T.; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

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Authors

Andrew Davies

J.D. Albar

Alex Summerfield

James C. Thomas

Vladimir V. Korolkov

Emily Stapleton

James Wrigley

Nathan L. Goodey

Kenji Watanabe

Takashi Taniguchi

C.T. Foxon

Laurence Eaves



Abstract

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and co-exists with a topologically-modified moiré pattern, and with regions of strained graphene which have giant moiré periods up to ~80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls, and also the topological defects where they terminate. We relate these results to theoretical models of band-gap formation in graphene/boron nitride heterostructures.

Citation

Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., Stapleton, E., Wrigley, J., Goodey, N. L., Mellor, C. J., Khlobystov, A. N., Watanabe, K., Taniguchi, T., Foxon, C., Eaves, L., Novikov, S. V., & Beton, P. H. (2018). Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. Nano Letters, 18(1), 498-504. https://doi.org/10.1021/acs.nanolett.7b04453

Journal Article Type Article
Acceptance Date Dec 6, 2017
Online Publication Date Dec 12, 2017
Publication Date Jan 10, 2018
Deposit Date Dec 14, 2017
Publicly Available Date Dec 14, 2017
Journal Nano Letters
Print ISSN 1530-6984
Electronic ISSN 1530-6992
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 18
Issue 1
Pages 498-504
DOI https://doi.org/10.1021/acs.nanolett.7b04453
Keywords graphene; boron nitride; growth; strain; band-gap; epitaxy
Public URL https://nottingham-repository.worktribe.com/output/904183
Publisher URL http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b04453
Contract Date Dec 14, 2017

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