ANDREW TRENTIN andrew.trentin@nottingham.ac.uk
Senior Application Engineers in N Industrialisation of Electrical Machines and Drives
Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs
Trentin, Andrew; Zanchetta, Pericle; Empringham, Lee; De Lillo, Liliana; Wheeler, Patrick; Clare, Jon C.
Authors
Pericle Zanchetta
Professor LEE EMPRINGHAM LEE.EMPRINGHAM@NOTTINGHAM.AC.UK
Professor of Power Conversion Technologies
LILIANA DE LILLO Liliana.De_lillo@nottingham.ac.uk
Associate Professor
Professor PATRICK WHEELER pat.wheeler@nottingham.ac.uk
Professor of Power Electronic Systems
Jon C. Clare
Abstract
This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage.
Citation
Trentin, A., Zanchetta, P., Empringham, L., De Lillo, L., Wheeler, P., & Clare, J. C. (2016). Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs.
Conference Name | 2016 IEEE Energy Conversion Congress and Exposition (ECCE) |
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End Date | Sep 22, 2016 |
Acceptance Date | May 1, 2016 |
Online Publication Date | Feb 16, 2017 |
Publication Date | Sep 18, 2016 |
Deposit Date | Jun 28, 2017 |
Publicly Available Date | Jun 28, 2017 |
Peer Reviewed | Peer Reviewed |
Public URL | https://nottingham-repository.worktribe.com/output/817291 |
Publisher URL | http://ieeexplore.ieee.org/document/7855094/ |
Contract Date | Jun 28, 2017 |
Files
Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs.pdf
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