Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

Rodrigues, D.H.; Brasil, M.J.S.P.; Orlita, M.; Kunc, J.; Galeti, H.V.A.; Henini, M.; Taylor, D.; H.V.A., Y.G.

Abstract

We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x  =  5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.

Citation

Rodrigues, D., Brasil, M., Orlita, M., Kunc, J., Galeti, H., Henini, M., …H.V.A., Y. (2016). Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49(16), https://doi.org/10.1088/0022-3727/49/16/165104

• Journal Article Type: Article
• Acceptance Date: Mar 2, 2016
• Publication Date: Mar 24, 2016
• Deposit Date: Jan 4, 2017
• Publicly Available Date: Jan 4, 2017
• Journal: Journal of Physics D: Applied Physics
• Print ISSN: 0022-3727
• Electronic ISSN: 1361-6463
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 49
• Issue: 16
• DOI: https://doi.org/10.1088/0022-3727/49/16/165104
• Public URL: https://nottingham-repository.worktribe.com/output/779319
• Publisher URL: http://iopscience.iop.org/article/10.1088/0022-3727/49/16/165104/meta
• Contract Date: Jan 4, 2017