Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

Bansal, Kanika; Henini, M.; Alshammari, Marzook S.; Datta, Shouvik

Abstract

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Citation

Bansal, K., Henini, M., Alshammari, M. S., & Datta, S. (2014). Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias. Applied Physics Letters, 105(12), Article 123503. https://doi.org/10.1063/1.4896541

• Journal Article Type: Article
• Acceptance Date: Sep 14, 2014
• Publication Date: Sep 24, 2014
• Deposit Date: Jul 1, 2016
• Publicly Available Date: Jul 1, 2016
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 105
• Issue: 12
• Article Number: 123503
• DOI: https://doi.org/10.1063/1.4896541
• Public URL: https://nottingham-repository.worktribe.com/output/735367
• Publisher URL: http://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896541
• Additional Information: c2014 AIP Publishing LLC Bansal, K and Henini, M and Alshammari, M.S. and Datta, S (2014) Dynamics of Electronic Transitions and Frequency Dependence of Negative Capacitance in Semiconductor Diodes Under High Forward Bias.; Applied Physics Letters, 105 http://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896541
• Contract Date: Jul 1, 2016