Outputs (10)

Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design (2023)
Presentation / Conference Contribution
Fayyaz, A., Li, Y., Evans, P., Watson, A., Wheeler, P., & Gerada, C. (2023, August). Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design. Presented at WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Hsinchu, Taiwan

This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and... Read More about Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design.

Paralleling of Transient Overvoltage Protection Elements within High Power DC Solid-State Circuit Breaker (SSCB) for Electric/Hybrid-Electric Aircraft (2022)
Presentation / Conference Contribution
Fayyaz, A., Ortiz, M. U., Wang, Z., Yang, T., & Wheeler, P. (2022, September). Paralleling of Transient Overvoltage Protection Elements within High Power DC Solid-State Circuit Breaker (SSCB) for Electric/Hybrid-Electric Aircraft. Presented at 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Coventry, United Kingdom

This paper discusses the use of different parallel transient overvoltage protection elements to deal with transient overvoltages within high-voltage high-current bidirectional DC solid-state circuit breakers (SSCBs) for electric/hybrid-electric aircr... Read More about Paralleling of Transient Overvoltage Protection Elements within High Power DC Solid-State Circuit Breaker (SSCB) for Electric/Hybrid-Electric Aircraft.

Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications (2021)
Presentation / Conference Contribution
Fayyaz, A., Wang, Z., Ortiz, M. U., Yang, T., & Wheeler, P. (2021, September). Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications. Presented at 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Ghent, Belgium

Design of a high-voltage and high-current solid-state circuit breaker (SSCB) for aerospace applications is highly challenging, as the overall system should comply with the most stringent operating environment. In addition, the implemented power semic... Read More about Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications.

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation (2019)
Presentation / Conference Contribution
Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2018, November). SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. Presented at 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nottingham, UK

V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous... Read More about SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation.

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More about VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated pow... Read More about Avalanche ruggedness of parallel SiC power MOSFETs.

Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module (2018)
Presentation / Conference Contribution
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., Maresca, L., Breglio, G., & Irace, A. (2018, September). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. Presented at 20th European Conference on Power Electronics and Applications (EPE 18 ECCE Europe), Riga, Latvia

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.

Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling (2018)
Presentation / Conference Contribution
Castellazzi, A., Fayyaz, A., Gurpinar, E., Hussein, A., Li, J., & Mouawad, B. (2018, May). Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling. Presented at 2018 International Power Electronics Conference (ECCE Asia-IPEC 2018), Niigata, Japan

Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield maj... Read More about Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling.

SiC power MOSFETs performance, robustness and technology maturity (2016)
Journal Article
Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discus... Read More about SiC power MOSFETs performance, robustness and technology maturity.

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs (2014)
Journal Article
Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche... Read More about Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.