Outputs (2)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire (2004)
Book Chapter
Fay, M. W., Harrison, I., Larkins, E. C., Novikov, S. V., Foxon, C., & Brown, P. D. (2004). TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In S. McVitie, & D. McComb (Eds.), Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003 (23-26). Institute of Physics Publishing

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy su... Read More about TEM assessment of As-doped GaN epitaxial layers grown on sapphire.

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN (2004)
Book Chapter
Moldovan, G., Harrison, I., Roe, M., & Brown, P. D. (2004). Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN. In S. McVitie, & D. McComb (Eds.), Electron microscopy and analysis 2003: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics Publishing

A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KO... Read More about Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN.