Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN

Moldovan, Grigore; Harrison, Ian; Roe, Martin; Brown, Paul D.

Abstract

A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KOH treatment, mirrored in a reduction in the magnitude of the EBIC current, even though the EBIC images look visibly unaltered. XPS demonstrates a modification in the surfaces states, e.g. resulting in a –0.3eV shift in the binding energy of Ga3d for MBE GaN following KOH processing.

Citation

Moldovan, G., Harrison, I., Roe, M., & Brown, P. D. (2004). Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN. In S. McVitie, & D. McComb (Eds.), Electron microscopy and analysis 2003: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics Publishing

• Publication Date: Jan 1, 2004
• Deposit Date: Mar 25, 2011
• Publicly Available Date: Aug 13, 2013
• Peer Reviewed: Peer Reviewed
• Issue: 179
• Series Title: Institute of Physics conference series
• Book Title: Electron microscopy and analysis 2003: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003
• ISBN: 750309679
• Keywords: I-V; EBIC; XPS; GaN
• Public URL: https://nottingham-repository.worktribe.com/output/1021696
• Related Public URLs: http://iopscience.iop.org/