Professor MOHAMED HENINI's Outputs (6)

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer (2019)
Journal Article
Filali, W., Garoudja, E., Oussalah, S., Mekheldi, M., Sengouga, N., & Henini, M. (2019). A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer. Mikroelektronika / Russian Microelectronics, 48(6), 428-434. https://doi.org/10.1134/s1063739719660028

We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoe... Read More about A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer.

The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction (2019)
Journal Article
Filali, W., Garoudja, E., Oussalah, S., Sengouga, N., Henini, M., & Taylor, D. (2019). The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction. journal of Nano- and Electronic Physics, 11(5), Article 05012. https://doi.org/10.21272/jnep.11%285%29.05012

In this work, we investigate the forward current-voltage characteristics of p-type Ti/Au/Al0.29Ga0.71As Schottky diode, which were measured over a range of temperatures from 260 to 400 K. The experimental current-voltage characteristics are used to e... Read More about The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction.

Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures (2019)
Journal Article
Jameel, D. A., Marroquin, J. F. R., Aziz, M., Al Saqri, N. A., Jum'h, I., Telfah, A., Henini, M., & Felix, J. F. (2020). Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures. Applied Surface Science, 504, Article 144315. https://doi.org/10.1016/j.apsusc.2019.144315

In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-L... Read More about Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures.

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor (2019)
Journal Article
Felix, J. F., Da Silva, A. F., Da Silva, S. W., Qu, F., Qiu, B., Ren, J., De Azevedo, W. M., Henini, M., & Huang, C. C. (2020). A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor. Nanoscale Horizons, 5(2), 259-267. https://doi.org/10.1039/c9nh00414a

© 2020 The Royal Society of Chemistry. This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO2 c... Read More about A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor.

Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys (2019)
Journal Article
Balanta, M., de Oliveira, P., Albalawi, H., Galvão Gobato, Y., Galeti, H., Rodrigues, A., Henini, M., Almosni, S., Robert, C., Balocchi, A., Léger, Y., Carrère, H., Bahri, M., Patriarche, G., Marie, X., & Cornet, C. (2020). Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys. Journal of Alloys and Compounds, 814, Article 152233. https://doi.org/10.1016/j.jallcom.2019.152233

Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of character... Read More about Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys.

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes (2019)
Journal Article
Alburaih, H. A., Albalawi, H., & Henini, M. (2019). Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes. Semiconductor Science and Technology, 34(10), Article 105009. https://doi.org/10.1088/1361-6641/ab3671

© 2019 IOP Publishing Ltd. The effect of rapid thermal annealing on the electrical properties of p++GaP/p-GaAsPN/n+GaP diodes were investigated by using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) tec... Read More about Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes.