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A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor

Felix, Jorlandio Francisco; Da Silva, Arlon Fernandes; Da Silva, Sebasti�o Willam; Qu, Fanyao; Qiu, Bin; Ren, Junfeng; De Azevedo, Walter Mendes; Henini, Mohamed; Huang, Chung Che

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor Thumbnail


Authors

Jorlandio Francisco Felix

Arlon Fernandes Da Silva

Sebasti�o Willam Da Silva

Fanyao Qu

Bin Qiu

Junfeng Ren

Walter Mendes De Azevedo

Chung Che Huang



Abstract

© 2020 The Royal Society of Chemistry. This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO2 coated Si substrate. We found that ionizing radiation (gamma ray) interacts strongly with two-dimensional WS2, which induces effective p-doping in the samples. As the radiation dose increases, the p-doping concentration increases substantially. In addition, in the small radiation dose regime, the WS2 monolayers exhibit usual diamagnetic behavior. However, a remarkable ferromagnetic hysteresis emerges when the WS2 monolayer is irradiated with 400 Gys. This is attributed to the presence of irradiation-induced complex vacancies composed of one tungsten and a pair of its nearby sulfurs. Moreover, these results have shown that the detector based on the large scale monolayer VdWE-grown two-dimensional WS2 is an appealing candidate for sensing high-energy photons at small radiation doses.

Citation

Felix, J. F., Da Silva, A. F., Da Silva, S. W., Qu, F., Qiu, B., Ren, J., De Azevedo, W. M., Henini, M., & Huang, C. C. (2020). A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor. Nanoscale Horizons, 5(2), 259-267. https://doi.org/10.1039/c9nh00414a

Journal Article Type Article
Acceptance Date Oct 1, 2019
Online Publication Date Oct 2, 2019
Publication Date Feb 1, 2020
Deposit Date Oct 2, 2019
Publicly Available Date Oct 3, 2020
Journal Nanoscale Horizons
Print ISSN 2055-6756
Electronic ISSN 2055-6764
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 5
Issue 2
Pages 259-267
DOI https://doi.org/10.1039/c9nh00414a
Public URL https://nottingham-repository.worktribe.com/output/2738033
Publisher URL https://pubs.rsc.org/en/Content/ArticleLanding/2019/NH/C9NH00414A#!divAbstract
Contract Date Oct 2, 2019

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