All Outputs (6)

Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods (2018)
Journal Article
Soundararajah, Q. Y., Webster, R. F., Griffiths, I. J., Novikov, S. V., Foxon, C. T., & Cherns, D. (2018). Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods. Nanotechnology, 29(40), Article 405706. https://doi.org/10.1088/1361-6528/aad38d

Two In x Ga1−x N nanorod samples with graded In compositions of x = 0.5–0 (Ga-rich) and x = 0.5–1 (In-rich) grown by molecular beam epitaxy were studied using transmission electron microscopy. The nanorods had a wurtzite crystal structure with growth... Read More about Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods.

High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes (2018)
Journal Article
Cheng, T. S., Summerfield, A., Mellor, C. J., Khlobystov, A. N., Eaves, L., Foxon, C. T., …Novikov, S. V. (2018). High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes. Materials, 11(7), https://doi.org/10.3390/ma11071119

Hexagonal boron nitride (hBN) has attracted much attention as a key component in van der Waals heterostructures and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes.

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure (2018)
Journal Article
Pierucci, D., Zribi, J., Henck, H., Chaste, J., Silly, M. G., Bertran, F., …Ouerghi, A. (2018). Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112(25), https://doi.org/10.1063/1.5029220

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (A... Read More about Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure.

Moiré-modulated conductance of hexagonal boron nitride tunnel barriers (2018)
Journal Article
Summerfield, A., Kozikov, A., Cheng, T. S., Davies, A., Cho, Y., Khlobystov, A. N., …Beton, P. H. (in press). Moiré-modulated conductance of hexagonal boron nitride tunnel barriers. Nano Letters, https://doi.org/10.1021/acs.nanolett.8b01223

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hB... Read More about Moiré-modulated conductance of hexagonal boron nitride tunnel barriers.

Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies (2018)
Journal Article
Whale, J., Akimov, A. V., Novikov, S. V., Mellor, C. J., & Kent, A. J. (2018). Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies. Physical Review Materials, 2(3), https://doi.org/10.1103/PhysRevMaterials.2.034606

Picosecond ultrasonics was used to study the photoelastic properties of zinc-blende (cubic) c-Al?Ga???N with x around 0.5 The velocities for longitudinal sound in the alloys were measured using ultrafast UV pump-probe experiments with (Al... Read More about Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies.

High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018)
Journal Article
Cheng, T. S., Summerfield, A., Mellor, C. J., Davies, A., Khlobystov, A. N., Eaves, L., …Novikov, S. V. (in press). High-temperature molecular beam epitaxy of hexagonal boron nitride layers. Journal of Vacuum Science and Technology B, 36(2), Article 02D103-1. https://doi.org/10.1116/1.5011280

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) a... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride layers.