All Outputs (42)

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy (2005)
Book Chapter
Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Wang, K., Gallagher, B., …Brown, P. D. (2005). Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In A. Cullis, & A. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relat... Read More about Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy.

TEM assessment of As-doped GaN epitaxial layers grown on sapphire (2004)
Book Chapter
Fay, M. W., Harrison, I., Larkins, E. C., Novikov, S. V., Foxon, C., & Brown, P. D. (2004). TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In S. McVitie, & D. McComb (Eds.), Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003 (23-26). Institute of Physics Publishing

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy su... Read More about TEM assessment of As-doped GaN epitaxial layers grown on sapphire.