All Outputs (3)

Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process (2021)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2021). Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process. IEEE Transactions on Device and Materials Reliability, 21(4), 536-543. https://doi.org/10.1109/TDMR.2021.3118323

This study investigates the power cycling reliability of nanosilver sintered joints formed by a time-reduced sintering process, designed for use on a die bonder. A range of sintering parameters, reflecting different levels of manufacturability, were... Read More about Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process.

Optimal Integrated Design of a Magnetically Coupled Interleaved H-Bridge (2021)
Journal Article
Stratta, A., Gottardo, D., Nardo, M. D., Espina, J., Lillo, L. D., Empringham, L., & Johnson, M. C. (2022). Optimal Integrated Design of a Magnetically Coupled Interleaved H-Bridge. IEEE Transactions on Power Electronics, 37(1), 724-737. https://doi.org/10.1109/TPEL.2021.3094025

The application of wide-band gap semiconductors and their integration with other power electronics components (e.g., passives, gate drivers, sensing, thermal management) can meet the growing demand for volume reduction in power electronics systems. T... Read More about Optimal Integrated Design of a Magnetically Coupled Interleaved H-Bridge.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.