A. Teffahi
γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N
Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J.F.; henini, m
Authors
D. Hamri
A. Djeghlouf
M. Abboun Abid
A. Saidane
N. Al Saqri
J.F. Felix
Professor MOHAMED HENINI MOHAMED.HENINI@NOTTINGHAM.AC.UK
PROFESSOR OF APPLIED PHYSICS
Abstract
Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε’) shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200–290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.
Citation
Teffahi, A., Hamri, D., Djeghlouf, A., Abboun Abid, M., Saidane, A., Al Saqri, N., Felix, J., & henini, M. (2018). γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N. Radiation Physics and Chemistry, 147, https://doi.org/10.1016/j.radphyschem.2018.01.029
Journal Article Type | Article |
---|---|
Acceptance Date | Jan 30, 2018 |
Online Publication Date | Feb 1, 2018 |
Publication Date | Jun 30, 2018 |
Deposit Date | Feb 8, 2018 |
Publicly Available Date | Feb 2, 2019 |
Journal | Radiation Physics and Chemistry |
Print ISSN | 0969-806X |
Electronic ISSN | 0969-806X |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 147 |
DOI | https://doi.org/10.1016/j.radphyschem.2018.01.029 |
Keywords | γ-Rays irradiation, Dielectric relaxation, Dielectric constant, Dielectric loss, AC conductivity |
Public URL | https://nottingham-repository.worktribe.com/output/944028 |
Publisher URL | https://www.sciencedirect.com/science/article/pii/S0969806X17309301 |
Contract Date | Feb 8, 2018 |
Files
g-rays irradiation effects on dielectric properties of Ti_Au_GaAsN Schottky diodes with 1_2%N.pdf
(250 Kb)
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