Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A.; Kudrynskyi, Zakhar R.; Di Paola, D.M.; Makarovsky, Oleg; Kesaria, M.; Krier, A.; Sandall, I.C.; Tan, C.H.; Kovalyuk, Zakhar D.; Patan�, Amalia

Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Citation

Velichko, A., Kudrynskyi, Z. R., Di Paola, D., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I., Tan, C., Kovalyuk, Z. D., & Patanè, A. (in press). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), Article 182115. https://doi.org/10.1063/1.4967381

• Journal Article Type: Article
• Acceptance Date: Oct 27, 2016
• Online Publication Date: Nov 4, 2016
• Deposit Date: Jan 4, 2017
• Publicly Available Date: Jan 4, 2017
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 109
• Issue: 18
• Article Number: 182115
• DOI: https://doi.org/10.1063/1.4967381
• Public URL: https://nottingham-repository.worktribe.com/output/830032
• Publisher URL: http://aip.scitation.org/doi/10.1063/1.4967381
• Contract Date: Jan 4, 2017