Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A.; Kudrynskyi, Zakhar R.; Di Paola, D.M.; Makarovsky, Oleg; Kesaria, M.; Krier, A.; Sandall, I.C.; Tan, C.H.; Kovalyuk, Zakhar D.; Patan�, Amalia

Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Citation

Velichko, A., Kudrynskyi, Z. R., Di Paola, D., Makarovsky, O., Kesaria, M., Krier, A., …Patanè, A. (in press). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), Article 182115. https://doi.org/10.1063/1.4967381

• Journal Article Type: Article
• Acceptance Date: Oct 27, 2016
• Online Publication Date: Nov 4, 2016
• Deposit Date: Jan 4, 2017
• Publicly Available Date: Jan 4, 2017
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 109
• Issue: 18
• Article Number: 182115
• DOI: https://doi.org/10.1063/1.4967381
• Public URL: https://nottingham-repository.worktribe.com/output/830032
• Publisher URL: http://aip.scitation.org/doi/10.1063/1.4967381