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Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A.; Kudrynskyi, Zakhar R.; Di Paola, D.M.; Makarovsky, Oleg; Kesaria, M.; Krier, A.; Sandall, I.C.; Tan, C.H.; Kovalyuk, Zakhar D.; Patanè, Amalia

Authors

A. Velichko

Zakhar R. Kudrynskyi

D.M. Di Paola

Oleg Makarovsky

M. Kesaria

A. Krier

I.C. Sandall

C.H. Tan

Zakhar D. Kovalyuk

Amalia Patanè



Abstract

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of 10[superscript]4 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Journal Article Type Article
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 109
Issue 18
Article Number 182115
APA6 Citation Velichko, A., Kudrynskyi, Z. R., Di Paola, D., Makarovsky, O., Kesaria, M., Krier, A., …Patanè, A. (in press). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), https://doi.org/10.1063/1.4967381
DOI https://doi.org/10.1063/1.4967381
Publisher URL http://aip.scitation.org/doi/10.1063/1.4967381
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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